IDWD30E120D7XKSA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: DIODE GEN PURP 1200V 52A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 5A (Io)
Reverse Recovery Time (trr): 135 ns
Technology: Standard
Current - Average Rectified (Io): 52A
Supplier Device Package: PG-TO247-2-2
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
на замовлення 148 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 290.97 грн |
| 10+ | 204.41 грн |
| 25+ | 185.5 грн |
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Технічний опис IDWD30E120D7XKSA1 Infineon Technologies
Description: DIODE GEN PURP 1200V 52A TO247-2, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 5A (Io), Reverse Recovery Time (trr): 135 ns, Technology: Standard, Current - Average Rectified (Io): 52A, Supplier Device Package: PG-TO247-2-2, Operating Temperature - Junction: -40°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A, Current - Reverse Leakage @ Vr: 20 µA @ 1200 V.