HP8M51TB1 Rohm Semiconductor
на замовлення 1365 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
108+ | 114.01 грн |
113+ | 108.91 грн |
250+ | 104.55 грн |
500+ | 97.17 грн |
1000+ | 87.04 грн |
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Технічний опис HP8M51TB1 Rohm Semiconductor
Description: MOSFET N/P-CH 100V 4.5A 8HSOP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3W (Ta), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 50V, 1430pF @ 50V, Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 10V, 290mOhm @ 4.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 26.2nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-HSOP.
Інші пропозиції HP8M51TB1 за ціною від 65.1 грн до 177.92 грн
Фото | Назва | Виробник | Інформація |
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HP8M51TB1 | Виробник : Rohm Semiconductor |
Description: MOSFET N/P-CH 100V 4.5A 8HSOP Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 50V, 1430pF @ 50V Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 10V, 290mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 26.2nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP |
на замовлення 705 шт: термін постачання 21-31 дні (днів) |
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HP8M51TB1 | Виробник : ROHM Semiconductor | MOSFETs HP8M51TB1 is low on-resistance and small surface mount package MOSFET. It is suitable for switching application. |
на замовлення 333 шт: термін постачання 21-30 дні (днів) |
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HP8M51TB1 | Виробник : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 4.5/-4.5A; Idm: 18A Mounting: SMD Kind of package: reel; tape Gate charge: 15/26.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 18A Case: HSOP8 Drain-source voltage: 100/-100V Drain current: 4.5/-4.5A On-state resistance: 180/320mΩ Type of transistor: N/P-MOSFET Power dissipation: 7W Polarisation: unipolar кількість в упаковці: 2500 шт |
товар відсутній |
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HP8M51TB1 | Виробник : Rohm Semiconductor |
Description: MOSFET N/P-CH 100V 4.5A 8HSOP Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 50V, 1430pF @ 50V Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 10V, 290mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 26.2nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-HSOP |
товар відсутній |
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HP8M51TB1 | Виробник : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 4.5/-4.5A; Idm: 18A Mounting: SMD Kind of package: reel; tape Gate charge: 15/26.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 18A Case: HSOP8 Drain-source voltage: 100/-100V Drain current: 4.5/-4.5A On-state resistance: 180/320mΩ Type of transistor: N/P-MOSFET Power dissipation: 7W Polarisation: unipolar |
товар відсутній |