G3R40MT12J-TR GeneSiC Semiconductor
Виробник: GeneSiC Semiconductor
Description: 1200V 40M TO-263-7 G3R SIC MOSFE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 35A, 18V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 18mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2897 pF @ 800 V
Description: 1200V 40M TO-263-7 G3R SIC MOSFE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 35A, 18V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 18mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2897 pF @ 800 V
на замовлення 690 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 1291.69 грн |
10+ | 1122.76 грн |
25+ | 1077.77 грн |
100+ | 951.07 грн |
250+ | 913.41 грн |
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Технічний опис G3R40MT12J-TR GeneSiC Semiconductor
Description: 1200V 40M TO-263-7 G3R SIC MOSFE, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 66A (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 35A, 18V, Power Dissipation (Max): 330W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 18mA, Supplier Device Package: TO-263-7, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 2897 pF @ 800 V.
Інші пропозиції G3R40MT12J-TR
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
G3R40MT12J-TR | Виробник : GeneSiC Semiconductor |
Description: 1200V 40M TO-263-7 G3R SIC MOSFE Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 35A, 18V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 18mA Supplier Device Package: TO-263-7 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 2897 pF @ 800 V |
товар відсутній |
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G3R40MT12J-TR | Виробник : GeneSiC Semiconductor | MOSFET 1200V 40mohm TO-263-7 G3R SiC MOSFET |
товар відсутній |