FS35R12KE3GBOSA1 Infineon Technologies


Infineon-FS35R12KE3G-DS-v03_00-en_de.pdf?fileId=db3a304412b407950112b4311aa45378 Виробник: Infineon Technologies
Description: IGBT MOD 1200V 55A 200W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 200 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
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Технічний опис FS35R12KE3GBOSA1 Infineon Technologies

Description: IGBT MOD 1200V 55A 200W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A, NTC Thermistor: Yes, Supplier Device Package: Module, Part Status: Discontinued at Digi-Key, Current - Collector (Ic) (Max): 55 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 200 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V.