на замовлення 2204 шт:
термін постачання 83-92 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
5+ | 82.24 грн |
10+ | 71.14 грн |
100+ | 47.4 грн |
500+ | 37.48 грн |
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Технічний опис FQD20N06TM onsemi / Fairchild
Description: MOSFET N-CH 60V 16.8A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16.8A (Tc), Rds On (Max) @ Id, Vgs: 63mOhm @ 8.4A, 10V, Power Dissipation (Max): 2.5W (Ta), 38W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 25 V.
Інші пропозиції FQD20N06TM
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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FQD20N06TM | Виробник : onsemi |
Description: MOSFET N-CH 60V 16.8A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.8A (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 8.4A, 10V Power Dissipation (Max): 2.5W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 25 V |
товар відсутній |
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FQD20N06TM | Виробник : onsemi |
Description: MOSFET N-CH 60V 16.8A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.8A (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 8.4A, 10V Power Dissipation (Max): 2.5W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 25 V |
товар відсутній |