FP15R12KS4CBOSA1

FP15R12KS4CBOSA1 Infineon Technologies


Infineon-FP15R12KS4C-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b430a55a5169 Виробник: Infineon Technologies
Description: IGBT MOD 1200V 30A 180W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 180 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
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Технічний опис FP15R12KS4CBOSA1 Infineon Technologies

Description: IGBT MOD 1200V 30A 180W, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 15A, NTC Thermistor: Yes, Supplier Device Package: Module, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 180 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 1 nF @ 25 V.