FJV4113RMTF ON Semiconductor / Fairchild
на замовлення 17810 шт:
термін постачання 21-30 дні (днів)
Відгуки про товар
Написати відгук
Технічний опис FJV4113RMTF ON Semiconductor / Fairchild
Description: TRANS PREBIAS PNP 50V SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V, Supplier Device Package: SOT-23-3, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms.
Інші пропозиції FJV4113RMTF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
FJV4113RMTF | Виробник : onsemi |
 Description: TRANS PREBIAS PNP 50V SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms |
товар відсутній |
|
|
|
FJV4113RMTF | Виробник : onsemi |
Description: TRANS PREBIAS PNP 50V SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms |
товар відсутній |