FDMS3602S-P onsemi
Виробник: onsemi
Description: MOSFET 2N-CH 25V 15A/30A 8PQFN
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W (Ta), 2.5W (Ta)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 30A (Tc), 26A (Ta), 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 13V, 4120pF @ 13V
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V, 64nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 3V @ 250µA, 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Description: MOSFET 2N-CH 25V 15A/30A 8PQFN
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W (Ta), 2.5W (Ta)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 30A (Tc), 26A (Ta), 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 13V, 4120pF @ 13V
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V, 64nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 3V @ 250µA, 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
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Технічний опис FDMS3602S-P onsemi
Description: MOSFET 2N-CH 25V 15A/30A 8PQFN, Packaging: Bulk, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.2W (Ta), 2.5W (Ta), Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 30A (Tc), 26A (Ta), 40A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1680pF @ 13V, 4120pF @ 13V, Rds On (Max) @ Id, Vgs: 5.6mOhm @ 15A, 10V, Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V, 64nC @ 10V, FET Feature: Standard, Vgs(th) (Max) @ Id: 3V @ 250µA, 3V @ 1mA, Supplier Device Package: 8-PQFN (5x6).