DMTH32M5LPSQ-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 170A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 170A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V
Power Dissipation (Max): 3.2W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V
Qualification: AEC-Q101
на замовлення 285000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2500+ | 36.18 грн |
5000+ | 33.18 грн |
12500+ | 31.65 грн |
Відгуки про товар
Написати відгук
Технічний опис DMTH32M5LPSQ-13 Diodes Incorporated
Description: DIODES INC. - DMTH32M5LPSQ-13 - Leistungs-MOSFET, n-Kanal, 30 V, 170 A, 0.0016 ohm, PowerDI 5060, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 30V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 170A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 3V, euEccn: NLR, Verlustleistung: 100W, Bauform - Transistor: PowerDI 5060, Anzahl der Pins: 8Pin(s), Produktpalette: PW Series, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.0016ohm, SVHC: Lead (14-Jun-2023).
Інші пропозиції DMTH32M5LPSQ-13 за ціною від 31.36 грн до 103.29 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
DMTH32M5LPSQ-13 | Виробник : DIODES INC. |
Description: DIODES INC. - DMTH32M5LPSQ-13 - Leistungs-MOSFET, n-Kanal, 30 V, 170 A, 0.0016 ohm, PowerDI 5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 170A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 100W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pin(s) Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0016ohm SVHC: Lead (14-Jun-2023) |
на замовлення 2495 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
DMTH32M5LPSQ-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 30V 170A PWRDI5060-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 10V Power Dissipation (Max): 3.2W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 287371 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
DMTH32M5LPSQ-13 | Виробник : Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V |
на замовлення 2495 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
DMTH32M5LPSQ-13 | Виробник : DIODES INC. |
Description: DIODES INC. - DMTH32M5LPSQ-13 - Leistungs-MOSFET, n-Kanal, 30 V, 170 A, 0.0016 ohm, PowerDI 5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 170A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 100W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0016ohm SVHC: Lead (23-Jan-2024) |
на замовлення 2392 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
DMTH32M5LPSQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W Drain-source voltage: 30V Drain current: 120A On-state resistance: 3.2mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 3.2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 68nC Kind of channel: enhanced Gate-source voltage: ±16V Pulsed drain current: 350A Mounting: SMD Case: PowerDI5060-8 кількість в упаковці: 2500 шт |
товар відсутній |
||||||||||||||||
DMTH32M5LPSQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W Drain-source voltage: 30V Drain current: 120A On-state resistance: 3.2mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 3.2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 68nC Kind of channel: enhanced Gate-source voltage: ±16V Pulsed drain current: 350A Mounting: SMD Case: PowerDI5060-8 |
товар відсутній |