DMTH3004LK3Q-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET N-CH 30V 21A/75A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 107W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V
на замовлення 2471 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 70.81 грн |
| 10+ | 55.6 грн |
| 100+ | 43.22 грн |
| 500+ | 34.38 грн |
| 1000+ | 28 грн |
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Технічний опис DMTH3004LK3Q-13 Diodes Incorporated
Description: MOSFET N-CH 30V 21A/75A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 75A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V, Power Dissipation (Max): 107W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V.
Інші пропозиції DMTH3004LK3Q-13 за ціною від 26.04 грн до 78.13 грн
| Фото | Назва | Виробник | Інформація |
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DMTH3004LK3Q-13 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS: |
на замовлення 1742 шт: термін постачання 21-30 дні (днів) |
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DMTH3004LK3Q-13 | Виробник : Diodes Inc |
Trans MOSFET N-CH 30V 21A Automotive 3-Pin(2+Tab) DPAK T/R |
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| DMTH3004LK3Q-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 15A; Idm: 105A; 107W; TO252 Mounting: SMD Pulsed drain current: 105A Power dissipation: 107W Gate charge: 44nC Polarisation: unipolar Drain current: 15A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Kind of package: reel; tape Case: TO252 On-state resistance: 7mΩ Gate-source voltage: ±20/±-16V кількість в упаковці: 2500 шт |
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DMTH3004LK3Q-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 30V 21A/75A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 75A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Power Dissipation (Max): 107W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 15 V |
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| DMTH3004LK3Q-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 15A; Idm: 105A; 107W; TO252 Mounting: SMD Pulsed drain current: 105A Power dissipation: 107W Gate charge: 44nC Polarisation: unipolar Drain current: 15A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Kind of package: reel; tape Case: TO252 On-state resistance: 7mΩ Gate-source voltage: ±20/±-16V |
товар відсутній |