DMT8012LSS-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET N-CH 80V 9.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 12A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 919 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 61.47 грн |
| 10+ | 48.56 грн |
| 100+ | 37.74 грн |
| 500+ | 30.03 грн |
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Технічний опис DMT8012LSS-13 Diodes Incorporated
Description: MOSFET N-CH 80V 9.7A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta), Rds On (Max) @ Id, Vgs: 16.5mOhm @ 12A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції DMT8012LSS-13 за ціною від 23.02 грн до 67.89 грн
| Фото | Назва | Виробник | Інформація |
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DMT8012LSS-13 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 61V-100V |
на замовлення 3550 шт: термін постачання 21-30 дні (днів) |
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DMT8012LSS-13 | Виробник : Diodes Inc |
Trans MOSFET N-CH 80V 9.7A 8-Pin SO T/R |
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DMT8012LSS-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 7.8A; Idm: 80A; 2W; SO8 Drain-source voltage: 80V Drain current: 7.8A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Mounting: SMD Case: SO8 кількість в упаковці: 2500 шт |
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DMT8012LSS-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 80V 9.7A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 12A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1949 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
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DMT8012LSS-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 7.8A; Idm: 80A; 2W; SO8 Drain-source voltage: 80V Drain current: 7.8A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 34nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 80A Mounting: SMD Case: SO8 |
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