на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 18.46 грн |
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Технічний опис DMT6017LSS-13 Diodes Inc
Description: MOSFET N-CH 60V 9.2A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SO, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V.
Інші пропозиції DMT6017LSS-13 за ціною від 14.6 грн до 70.03 грн
| Фото | Назва | Виробник | Інформація |
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DMT6017LSS-13 | Виробник : Diodes Incorporated |
 MOSFETs MOSFET BVDSS: 41V-60V |
на замовлення 4746 шт: термін постачання 21-30 дні (днів) |
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DMT6017LSS-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 60V 9.2A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V |
на замовлення 3619 шт: термін постачання 21-31 дні (днів) |
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DMT6017LSS-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 9.5A; Idm: 60A; 2.1W; SO8 Case: SO8 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 60A Drain-source voltage: 60V Drain current: 9.5A On-state resistance: 23mΩ Type of transistor: N-MOSFET Power dissipation: 2.1W Polarisation: unipolar Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 2500 шт |
товар відсутній |
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DMT6017LSS-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 60V 9.2A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 30 V |
товар відсутній |
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DMT6017LSS-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 9.5A; Idm: 60A; 2.1W; SO8 Case: SO8 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 60A Drain-source voltage: 60V Drain current: 9.5A On-state resistance: 23mΩ Type of transistor: N-MOSFET Power dissipation: 2.1W Polarisation: unipolar Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±20V |
товар відсутній |