DMT6009LK3-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 13.3A/57A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 57A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
Description: MOSFET N-CH 60V 13.3A/57A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 57A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
на замовлення 72500 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2500+ | 27.96 грн |
5000+ | 24.97 грн |
7500+ | 24.49 грн |
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Технічний опис DMT6009LK3-13 Diodes Incorporated
Description: MOSFET N-CH 60V 13.3A/57A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 57A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V, Power Dissipation (Max): 2.6W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-252-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V.
Інші пропозиції DMT6009LK3-13 за ціною від 25.32 грн до 103.49 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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DMT6009LK3-13 | Виробник : Diodes Zetex | Trans MOSFET N-CH 60V 13.3A 3-Pin(2+Tab) DPAK T/R |
на замовлення 47500 шт: термін постачання 21-31 дні (днів) |
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DMT6009LK3-13 | Виробник : Diodes Incorporated | MOSFETs 60V N-Ch Enh FET 16Vgss 2.6W 57A |
на замовлення 8423 шт: термін постачання 21-30 дні (днів) |
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DMT6009LK3-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 60V 13.3A/57A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 57A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V Power Dissipation (Max): 2.6W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V |
на замовлення 75501 шт: термін постачання 21-31 дні (днів) |
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DMT6009LK3-13 | Виробник : Diodes Zetex | Trans MOSFET N-CH 60V 13.3A 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
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DMT6009LK3-13 | Виробник : Diodes Inc | Trans MOSFET N-CH 60V 13.3A 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
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DMT6009LK3-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10.6A; Idm: 90A; 2.6W; TO252 Case: TO252 Kind of package: reel; tape Mounting: SMD On-state resistance: 12.8mΩ Type of transistor: N-MOSFET Power dissipation: 2.6W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±16V Pulsed drain current: 90A Gate charge: 33.5nC Drain-source voltage: 60V Drain current: 10.6A кількість в упаковці: 2500 шт |
товар відсутній |
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DMT6009LK3-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 10.6A; Idm: 90A; 2.6W; TO252 Case: TO252 Kind of package: reel; tape Mounting: SMD On-state resistance: 12.8mΩ Type of transistor: N-MOSFET Power dissipation: 2.6W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±16V Pulsed drain current: 90A Gate charge: 33.5nC Drain-source voltage: 60V Drain current: 10.6A |
товар відсутній |