Технічний опис DMPH4011SK3-13 Diodes Inc
Description: MOSFET BVDSS: 31V~40V TO252 T&R, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 79A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V, Power Dissipation (Max): 3.7W (Ta), 115W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252 (DPAK), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4497 pF @ 20 V.
Інші пропозиції DMPH4011SK3-13
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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DMPH4011SK3-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -56A; Idm: -316A; 3.7W; TO252 Mounting: SMD Drain current: -56A Kind of channel: enhanced Drain-source voltage: -40V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: TO252 On-state resistance: 19mΩ Pulsed drain current: -316A Power dissipation: 3.7W Gate charge: 104nC Polarisation: unipolar кількість в упаковці: 2500 шт |
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DMPH4011SK3-13 | Виробник : Diodes Incorporated |
Description: MOSFET BVDSS: 31V~40V TO252 T&R Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V Power Dissipation (Max): 3.7W (Ta), 115W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4497 pF @ 20 V |
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DMPH4011SK3-13 | Виробник : Diodes Incorporated | MOSFETs MOSFET BVDSS: 31V~40V TO252 T&R 2.5K |
товар відсутній |
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DMPH4011SK3-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -56A; Idm: -316A; 3.7W; TO252 Mounting: SMD Drain current: -56A Kind of channel: enhanced Drain-source voltage: -40V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: TO252 On-state resistance: 19mΩ Pulsed drain current: -316A Power dissipation: 3.7W Gate charge: 104nC Polarisation: unipolar |
товар відсутній |