DMP6110SSSQ-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET PCH 60V 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 7.8A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 30 V
Description: MOSFET PCH 60V 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 7.8A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 30 V
на замовлення 2225 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
8+ | 40.46 грн |
10+ | 34.69 грн |
100+ | 26.63 грн |
500+ | 19.75 грн |
1000+ | 15.8 грн |
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Технічний опис DMP6110SSSQ-13 Diodes Incorporated
Description: MOSFET PCH 60V 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 7.8A (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 4.5A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 30 V.
Інші пропозиції DMP6110SSSQ-13 за ціною від 14.46 грн до 42.97 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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DMP6110SSSQ-13 | Виробник : Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V-60V |
на замовлення 2814 шт: термін постачання 21-30 дні (днів) |
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DMP6110SSSQ-13 | Виробник : Diodes Inc | Trans MOSFET P-CH 60V 4.5A Automotive 8-Pin SO T/R |
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DMP6110SSSQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.6A; Idm: -19A; 2W; SO8 Application: automotive industry Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 19.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -19A Drain-source voltage: -60V Drain current: -3.6A On-state resistance: 0.13Ω Type of transistor: P-MOSFET Case: SO8 Power dissipation: 2W кількість в упаковці: 1 шт |
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DMP6110SSSQ-13 | Виробник : Diodes Incorporated |
Description: MOSFET PCH 60V 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 7.8A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 4.5A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 30 V |
товар відсутній |
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DMP6110SSSQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.6A; Idm: -19A; 2W; SO8 Application: automotive industry Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 19.4nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -19A Drain-source voltage: -60V Drain current: -3.6A On-state resistance: 0.13Ω Type of transistor: P-MOSFET Case: SO8 Power dissipation: 2W |
товар відсутній |