DMP6110SFDFQ-7 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET P-CH 60V 3.5A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 4.5A, 10V
Power Dissipation (Max): 760mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 270000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 14.56 грн |
| 6000+ | 13.31 грн |
| 9000+ | 12.36 грн |
| 30000+ | 11.33 грн |
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Технічний опис DMP6110SFDFQ-7 Diodes Incorporated
Description: MOSFET P-CH 60V 3.5A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 110mOhm @ 4.5A, 10V, Power Dissipation (Max): 760mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type F), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції DMP6110SFDFQ-7 за ціною від 11.87 грн до 44.48 грн
| Фото | Назва | Виробник | Інформація |
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DMP6110SFDFQ-7 | Виробник : Diodes Incorporated |
Description: MOSFET P-CH 60V 3.5A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 4.5A, 10V Power Dissipation (Max): 760mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 969 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 272782 шт: термін постачання 21-31 дні (днів) |
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DMP6110SFDFQ-7 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 31V-40V |
на замовлення 5404 шт: термін постачання 21-30 дні (днів) |
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DMP6110SFDFQ-7 | Виробник : Diodes Inc |
Trans MOSFET P-CH 60V 3.5A 6-Pin UDFN EP T/R |
товар відсутній |
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| DMP6110SFDFQ-7 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 17.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -20A Drain-source voltage: -60V Drain current: -3.4A On-state resistance: 0.13Ω Type of transistor: P-MOSFET Case: U-DFN2020-6 Power dissipation: 1.3W кількість в упаковці: 3000 шт |
товар відсутній |
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| DMP6110SFDFQ-7 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.4A; Idm: -20A; 1.3W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 17.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -20A Drain-source voltage: -60V Drain current: -3.4A On-state resistance: 0.13Ω Type of transistor: P-MOSFET Case: U-DFN2020-6 Power dissipation: 1.3W |
товар відсутній |