DMP610DLQ-13

DMP610DLQ-13 Diodes Inc


dmp610dlq.pdf Виробник: Diodes Inc
P-Channel Enhancement Mode MOSFET Automotive AEC-Q101
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Технічний опис DMP610DLQ-13 Diodes Inc

Description: MOSFET BVDSS: 41V~60V SOT23 T&R, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 186mA (Ta), Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V, Power Dissipation (Max): 520mW (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

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DMP610DLQ-13 DMP610DLQ-13 Виробник : Diodes Incorporated DMP610DLQ.pdf Description: MOSFET BVDSS: 41V~60V SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 186mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Power Dissipation (Max): 520mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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DMP610DLQ-13 Виробник : Diodes Incorporated DMP610DLQ.pdf MOSFET MOSFET BVDSS: 41V~60V SOT23 T&R 10K
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