DMP3018SSS-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 10.5/25A 8SO T&R
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11.5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 15 V
Description: MOSFET P-CH 30V 10.5/25A 8SO T&R
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11.5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 15 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2500+ | 17.09 грн |
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Технічний опис DMP3018SSS-13 Diodes Incorporated
Description: MOSFET P-CH 30V 10.5/25A 8SO T&R, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 25A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 11.5A, 10V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 15 V.
Інші пропозиції DMP3018SSS-13 за ціною від 14.67 грн до 49.93 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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DMP3018SSS-13 | Виробник : Diodes Incorporated |
Description: MOSFET P-CH 30V 10.5/25A 8SO T&R Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 11.5A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 15 V |
на замовлення 3973 шт: термін постачання 21-31 дні (днів) |
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DMP3018SSS-13 | Виробник : Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V SO-8 T&R 2.5K |
на замовлення 3445 шт: термін постачання 21-30 дні (днів) |
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DMP3018SSS-13 | Виробник : Diodes Inc | Trans MOSFET P-CH 30V 10.5A 8-Pin SO T/R |
товар відсутній |
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DMP3018SSS-13 | Виробник : Diodes Zetex | Trans MOSFET P-CH 30V 10.5A 8-Pin SO T/R |
товар відсутній |
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DMP3018SSS-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; Idm: -90A; 1.7W; SO8 Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Gate charge: 51nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -90A Case: SO8 Drain-source voltage: -30V Drain current: -8.5A On-state resistance: 21mΩ Type of transistor: P-MOSFET Power dissipation: 1.7W кількість в упаковці: 2500 шт |
товар відсутній |
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DMP3018SSS-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; Idm: -90A; 1.7W; SO8 Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Gate charge: 51nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -90A Case: SO8 Drain-source voltage: -30V Drain current: -8.5A On-state resistance: 21mΩ Type of transistor: P-MOSFET Power dissipation: 1.7W |
товар відсутній |