Технічний опис DMP2900UV-7 Diodes Inc
Category: Multi channel transistors, Description: Transistor: P-MOSFET x2; unipolar; -20V; -680mA; Idm: -2.5A; 800mW, Type of transistor: P-MOSFET x2, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -0.68A, Pulsed drain current: -2.5A, Power dissipation: 0.8W, Case: SOT563, Gate-source voltage: ±6V, On-state resistance: 25Ω, Mounting: SMD, Gate charge: 0.7nC, Kind of package: reel; tape, Kind of channel: enhanced, кількість в упаковці: 5 шт.
Інші пропозиції DMP2900UV-7
Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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DMP2900UV-7 | Виробник : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -680mA; Idm: -2.5A; 800mW Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.68A Pulsed drain current: -2.5A Power dissipation: 0.8W Case: SOT563 Gate-source voltage: ±6V On-state resistance: 25Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5 шт |
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DMP2900UV-7 | Виробник : Diodes Incorporated | Description: MOSFET BVDSS: 8V-24V SOT563 |
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DMP2900UV-7 | Виробник : Diodes Incorporated | MOSFET MOSFET BVDSS: 8V~24V SOT563 T&R 3K |
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DMP2900UV-7 | Виробник : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -680mA; Idm: -2.5A; 800mW Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.68A Pulsed drain current: -2.5A Power dissipation: 0.8W Case: SOT563 Gate-source voltage: ±6V On-state resistance: 25Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |