Технічний опис DMP26M1UFG-13 Diodes Inc
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -56A; Idm: -110A; 3W, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -56A, Pulsed drain current: -110A, Power dissipation: 3W, Case: PowerDI3333-8, Gate-source voltage: ±10V, On-state resistance: 17mΩ, Mounting: SMD, Gate charge: 164nC, Kind of package: reel; tape, Kind of channel: enhanced, кількість в упаковці: 3000 шт.
Інші пропозиції DMP26M1UFG-13
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| DMP26M1UFG-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -56A; Idm: -110A; 3W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -56A Pulsed drain current: -110A Power dissipation: 3W Case: PowerDI3333-8 Gate-source voltage: ±10V On-state resistance: 17mΩ Mounting: SMD Gate charge: 164nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
||
| DMP26M1UFG-13 | Виробник : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -56A; Idm: -110A; 3W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -56A Pulsed drain current: -110A Power dissipation: 3W Case: PowerDI3333-8 Gate-source voltage: ±10V On-state resistance: 17mΩ Mounting: SMD Gate charge: 164nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |