DMP2070UQ-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 2A, 4.5V
Power Dissipation (Max): 830mW
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 118 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 2A, 4.5V
Power Dissipation (Max): 830mW
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 118 pF @ 10 V
Qualification: AEC-Q101
на замовлення 66 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
10+ | 34.24 грн |
15+ | 20.23 грн |
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Технічний опис DMP2070UQ-7 Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc), Rds On (Max) @ Id, Vgs: 44mOhm @ 2A, 4.5V, Power Dissipation (Max): 830mW, Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: SOT-23-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 118 pF @ 10 V, Qualification: AEC-Q101.
Інші пропозиції DMP2070UQ-7 за ціною від 7.05 грн до 39.44 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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DMP2070UQ-7 | Виробник : Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V SOT23 T&R 3K |
на замовлення 2109 шт: термін постачання 21-30 дні (днів) |
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DMP2070UQ-7 | Виробник : DIODES INCORPORATED | DMP2070UQ-7 SMD N channel transistors |
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DMP2070UQ-7 | Виробник : Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 2A, 4.5V Power Dissipation (Max): 830mW Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 118 pF @ 10 V Qualification: AEC-Q101 |
товар відсутній |