Технічний опис DMN3115UDMQ-13 Diodes Inc
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; Idm: 12.8A; 900mW; SOT26, Mounting: SMD, Application: automotive industry, Polarisation: unipolar, Kind of package: reel; tape, Kind of channel: enhanced, Gate-source voltage: ±8V, Pulsed drain current: 12.8A, Case: SOT26, Drain-source voltage: 30V, Drain current: 3.2A, On-state resistance: 0.13Ω, Type of transistor: N-MOSFET, Power dissipation: 0.9W, кількість в упаковці: 10000 шт.
Інші пропозиції DMN3115UDMQ-13
| Фото | Назва | Виробник | Інформація |
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DMN3115UDMQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; Idm: 12.8A; 900mW; SOT26 Mounting: SMD Application: automotive industry Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 12.8A Case: SOT26 Drain-source voltage: 30V Drain current: 3.2A On-state resistance: 0.13Ω Type of transistor: N-MOSFET Power dissipation: 0.9W кількість в упаковці: 10000 шт |
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| DMN3115UDMQ-13 | Виробник : Diodes Incorporated |
 MOSFETs MOSFET BVDSS: 25V-30V SOT26 T&R 10K |
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DMN3115UDMQ-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; Idm: 12.8A; 900mW; SOT26 Mounting: SMD Application: automotive industry Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 12.8A Case: SOT26 Drain-source voltage: 30V Drain current: 3.2A On-state resistance: 0.13Ω Type of transistor: N-MOSFET Power dissipation: 0.9W |
товар відсутній |