Технічний опис DMN3030LFG-7 Diodes Incorporated
Description: MOSFET N-CH 30V 5.3A PWRDI3333-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V, Power Dissipation (Max): 900mW (Ta), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: PowerDI3333-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 17.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 751 pF @ 10 V.
Інші пропозиції DMN3030LFG-7
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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DMN3030LFG-7 | Виробник : Diodes Inc | Trans MOSFET N-CH 30V 8.6A 8-Pin PowerDI EP T/R |
товар відсутній |
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DMN3030LFG-7 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 30V 5.3A PWRDI3333-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 751 pF @ 10 V |
товар відсутній |