DMN3021LFDF-7 Diodes Incorporated
на замовлення 9440 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 38.27 грн |
| 12+ | 29.37 грн |
| 100+ | 14.24 грн |
| 1000+ | 9.71 грн |
| 3000+ | 7.62 грн |
| 9000+ | 7.55 грн |
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Технічний опис DMN3021LFDF-7 Diodes Incorporated
Description: MOSFET N-CH 30V 11.8A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), Rds On (Max) @ Id, Vgs: 15mOhm @ 7A, 10V, Power Dissipation (Max): 2.03W (Ta), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type F), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 706 pF @ 15 V.
Інші пропозиції DMN3021LFDF-7
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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DMN3021LFDF-7 | Виробник : Diodes Incorporated |
 Description: MOSFET N-CH 30V 11.8A 6UDFNPackaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 7A, 10V Power Dissipation (Max): 2.03W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 706 pF @ 15 V |
на замовлення 62850 шт: термін постачання 21-31 дні (днів) |
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DMN3021LFDF-7 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 30V 11.8A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta) Rds On (Max) @ Id, Vgs: 15mOhm @ 7A, 10V Power Dissipation (Max): 2.03W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 706 pF @ 15 V |
на замовлення 60000 шт: термін постачання 21-31 дні (днів) |
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| DMN3021LFDF-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9.4A; Idm: 50A; 1.3W Mounting: SMD Power dissipation: 1.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 14nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50A Case: U-DFN2020-6 Drain-source voltage: 30V Drain current: 9.4A On-state resistance: 20mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
товар відсутній |
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| DMN3021LFDF-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9.4A; Idm: 50A; 1.3W Mounting: SMD Power dissipation: 1.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 14nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 50A Case: U-DFN2020-6 Drain-source voltage: 30V Drain current: 9.4A On-state resistance: 20mΩ Type of transistor: N-MOSFET |
товар відсутній |