DMN3016LSS-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET N-CH 30V 10.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V
на замовлення 102500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 12.71 грн |
| 5000+ | 11.61 грн |
| 12500+ | 10.78 грн |
| 25000+ | 9.89 грн |
| 62500+ | 9.63 грн |
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Технічний опис DMN3016LSS-13 Diodes Incorporated
Description: MOSFET N-CH 30V 10.3A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta), Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V.
Інші пропозиції DMN3016LSS-13 за ціною від 10.29 грн до 38.13 грн
| Фото | Назва | Виробник | Інформація |
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DMN3016LSS-13 | Виробник : Diodes Incorporated |
MOSFETs 30V N-Ch Enh FET 20Vdss 1.5W |
на замовлення 7031 шт: термін постачання 21-30 дні (днів) |
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DMN3016LSS-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 30V 10.3A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.3A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V |
на замовлення 104023 шт: термін постачання 21-31 дні (днів) |
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DMN3016LSS-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9.5A; Idm: 80A; 2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 9.5A Pulsed drain current: 80A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 25.1nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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DMN3016LSS-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9.5A; Idm: 80A; 2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 9.5A Pulsed drain current: 80A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 25.1nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |