DMN3016LFDE-7 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET N-CH 30V 10A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V
Power Dissipation (Max): 730mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 8.65 грн |
| 6000+ | 7.7 грн |
| 9000+ | 7.31 грн |
| 15000+ | 6.46 грн |
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Технічний опис DMN3016LFDE-7 Diodes Incorporated
Description: MOSFET N-CH 30V 10A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V, Power Dissipation (Max): 730mW (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type E), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V.
Інші пропозиції DMN3016LFDE-7 за ціною від 7.12 грн до 38.91 грн
| Фото | Назва | Виробник | Інформація |
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DMN3016LFDE-7 | Виробник : Diodes Incorporated |
MOSFET N-CHANNEL EH MODE 30V 10A 12mOhm |
на замовлення 14605 шт: термін постачання 21-30 дні (днів) |
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DMN3016LFDE-7 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 30V 10A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V Power Dissipation (Max): 730mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1415 pF @ 15 V |
на замовлення 22408 шт: термін постачання 21-31 дні (днів) |
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| DMN3016LFDE-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 90A; 1.3W; U-DFN2020-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 9A Pulsed drain current: 90A Power dissipation: 1.3W Case: U-DFN2020-6 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 25.1nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| DMN3016LFDE-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 90A; 1.3W; U-DFN2020-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 9A Pulsed drain current: 90A Power dissipation: 1.3W Case: U-DFN2020-6 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 25.1nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |