DMN3010LSS-13 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET N-CH 30V 16A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2096 pF @ 15 V
на замовлення 2490 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 52.91 грн |
| 10+ | 44.06 грн |
| 100+ | 30.53 грн |
| 500+ | 23.94 грн |
| 1000+ | 20.37 грн |
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Технічний опис DMN3010LSS-13 Diodes Incorporated
Description: MOSFET N-CH 30V 16A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-SOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 43.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2096 pF @ 15 V.
Інші пропозиції DMN3010LSS-13 за ціною від 16.47 грн до 56.23 грн
| Фото | Назва | Виробник | Інформація |
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DMN3010LSS-13 | Виробник : Diodes Incorporated |
MOSFET NMOS SINGLE N-CHANNL 30V 16A |
на замовлення 2330 шт: термін постачання 21-30 дні (днів) |
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DMN3010LSS-13 | Виробник : Diodes Inc |
Trans MOSFET N-CH 30V 16A 8-Pin SOP T/R |
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DMN3010LSS-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 64A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 13A Pulsed drain current: 64A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Gate charge: 43.7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2500 шт |
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DMN3010LSS-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 30V 16A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 43.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2096 pF @ 15 V |
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DMN3010LSS-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 13A; Idm: 64A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 13A Pulsed drain current: 64A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Gate charge: 43.7nC Kind of package: reel; tape Kind of channel: enhanced |
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