Технічний опис DMN3009LFVWQ-7 Diodes Inc
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 90A; 2W, Drain-source voltage: 30V, Drain current: 48A, Case: PowerDI3333-8, Polarisation: unipolar, On-state resistance: 7.4mΩ, Pulsed drain current: 90A, Power dissipation: 2W, Kind of channel: enhanced, Gate charge: 42nC, Gate-source voltage: ±20V, Kind of package: reel; tape, Mounting: SMD, Type of transistor: N-MOSFET, Application: automotive industry, кількість в упаковці: 2000 шт.
Інші пропозиції DMN3009LFVWQ-7
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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| DMN3009LFVWQ-7 | Виробник : DIODES INCORPORATED |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 90A; 2W Drain-source voltage: 30V Drain current: 48A Case: PowerDI3333-8 Polarisation: unipolar On-state resistance: 7.4mΩ Pulsed drain current: 90A Power dissipation: 2W Kind of channel: enhanced Gate charge: 42nC Gate-source voltage: ±20V Kind of package: reel; tape Mounting: SMD Type of transistor: N-MOSFET Application: automotive industry кількість в упаковці: 2000 шт |
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Type-UX;-;-8-Top.jpg "DMN3009LFVWQ-7") |
DMN3009LFVWQ-7 | Виробник : Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V POWERDI333 |
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| DMN3009LFVWQ-7 | Виробник : Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V~30V PowerDI3333-8 T&R 2K |
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| DMN3009LFVWQ-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 90A; 2W Drain-source voltage: 30V Drain current: 48A Case: PowerDI3333-8 Polarisation: unipolar On-state resistance: 7.4mΩ Pulsed drain current: 90A Power dissipation: 2W Kind of channel: enhanced Gate charge: 42nC Gate-source voltage: ±20V Kind of package: reel; tape Mounting: SMD Type of transistor: N-MOSFET Application: automotive industry |
товар відсутній |