DMN24H3D5L-13 DIODES INCORPORATED
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 390mA; Idm: 1.9A; 1.26W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
On-state resistance: 6Ω
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 6.6nC
Drain current: 0.39A
Drain-source voltage: 240V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1.9A
Power dissipation: 1.26W
кількість в упаковці: 10000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 390mA; Idm: 1.9A; 1.26W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
On-state resistance: 6Ω
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 6.6nC
Drain current: 0.39A
Drain-source voltage: 240V
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1.9A
Power dissipation: 1.26W
кількість в упаковці: 10000 шт
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Технічний опис DMN24H3D5L-13 DIODES INCORPORATED
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 240V; 390mA; Idm: 1.9A; 1.26W; SOT23, Mounting: SMD, Case: SOT23, Kind of package: reel; tape, On-state resistance: 6Ω, Polarisation: unipolar, Type of transistor: N-MOSFET, Gate charge: 6.6nC, Drain current: 0.39A, Drain-source voltage: 240V, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 1.9A, Power dissipation: 1.26W, кількість в упаковці: 10000 шт.
Інші пропозиції DMN24H3D5L-13
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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DMN24H3D5L-13 | Виробник : Diodes Incorporated | Description: MOSFET N-CH 240V 0.48A SOT23 |
товар відсутній |
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DMN24H3D5L-13 | Виробник : Diodes Incorporated | MOSFET N-Ch Enh Mode FET 240V 20Vgss |
товар відсутній |
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DMN24H3D5L-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 240V; 390mA; Idm: 1.9A; 1.26W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape On-state resistance: 6Ω Polarisation: unipolar Type of transistor: N-MOSFET Gate charge: 6.6nC Drain current: 0.39A Drain-source voltage: 240V Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 1.9A Power dissipation: 1.26W |
товар відсутній |