DMN2310U-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 300mA, 4.5V
Power Dissipation (Max): 480mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 300mA, 4.5V
Power Dissipation (Max): 480mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
на замовлення 2299 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
24+ | 13.23 грн |
38+ | 8.02 грн |
100+ | 4.95 грн |
500+ | 3.39 грн |
1000+ | 2.99 грн |
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Технічний опис DMN2310U-7 Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), Rds On (Max) @ Id, Vgs: 175mOhm @ 300mA, 4.5V, Power Dissipation (Max): 480mW (Ta), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V.
Інші пропозиції DMN2310U-7 за ціною від 2.01 грн до 17.96 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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DMN2310U-7 | Виробник : Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V SOT23 T&R 3K |
на замовлення 6390 шт: термін постачання 21-30 дні (днів) |
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DMN2310U-7 | Виробник : Diodes Inc | MOSFET BVDSS: 8V24V SOT23 T&R 3K |
товар відсутній |
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DMN2310U-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 680mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.2A Pulsed drain current: 4.8A Power dissipation: 0.68W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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DMN2310U-7 | Виробник : Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 175mOhm @ 300mA, 4.5V Power Dissipation (Max): 480mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V |
товар відсутній |
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DMN2310U-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 680mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.2A Pulsed drain current: 4.8A Power dissipation: 0.68W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |