DMN2028UFDF-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 20V 7.9A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 907 pF @ 10 V
Description: MOSFET N-CH 20V 7.9A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 907 pF @ 10 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
10000+ | 8.13 грн |
30000+ | 7.71 грн |
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Технічний опис DMN2028UFDF-13 Diodes Incorporated
Description: MOSFET N-CH 20V 7.9A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V, Power Dissipation (Max): 660mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type F), Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 907 pF @ 10 V.
Інші пропозиції DMN2028UFDF-13 за ціною від 8.54 грн до 8.54 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||
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DMN2028UFDF-13 | Виробник : Diodes Zetex | 20V N-CHANNEL ENHANCEMENT MODE MOSFET |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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DMN2028UFDF-13 | Виробник : Diodes Inc | 20V N-CHANNEL ENHANCEMENT MODE MOSFET |
товар відсутній |
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DMN2028UFDF-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 40A; 1.31W Type of transistor: N-MOSFET Case: U-DFN2020-6 Mounting: SMD Power dissipation: 1.31W Kind of package: reel; tape Pulsed drain current: 40A On-state resistance: 95mΩ Drain-source voltage: 20V Polarisation: unipolar Gate charge: 18nC Kind of channel: enhanced Gate-source voltage: ±8V Drain current: 7.5A кількість в упаковці: 10000 шт |
товар відсутній |
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DMN2028UFDF-13 | Виробник : Diodes Incorporated | MOSFETs N-Ch Enh Mode FET 20Vdss 8Vgss 40A |
товар відсутній |
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DMN2028UFDF-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 40A; 1.31W Type of transistor: N-MOSFET Case: U-DFN2020-6 Mounting: SMD Power dissipation: 1.31W Kind of package: reel; tape Pulsed drain current: 40A On-state resistance: 95mΩ Drain-source voltage: 20V Polarisation: unipolar Gate charge: 18nC Kind of channel: enhanced Gate-source voltage: ±8V Drain current: 7.5A |
товар відсутній |