DMN2008LFU-7 Diodes Incorporated
Виробник: Diodes IncorporatedDescription: MOSFET 2N-CH 20V 14.5A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 14.5A
Input Capacitance (Ciss) (Max) @ Vds: 1418pF @ 10V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 5.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250A
Supplier Device Package: U-DFN2030-6 (Type B)
Part Status: Active
на замовлення 150000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 16.03 грн |
| 6000+ | 14.62 грн |
| 9000+ | 13.81 грн |
Відгуки про товар
Написати відгук
Технічний опис DMN2008LFU-7 Diodes Incorporated
Description: MOSFET 2N-CH 20V 14.5A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 14.5A, Input Capacitance (Ciss) (Max) @ Vds: 1418pF @ 10V, Rds On (Max) @ Id, Vgs: 5.4mOhm @ 5.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V, Vgs(th) (Max) @ Id: 1.5V @ 250A, Supplier Device Package: U-DFN2030-6 (Type B), Part Status: Active.
Інші пропозиції DMN2008LFU-7 за ціною від 14.53 грн до 46.83 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
DMN2008LFU-7 | Виробник : Diodes Incorporated |
Description: MOSFET 2N-CH 20V 14.5A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 14.5A Input Capacitance (Ciss) (Max) @ Vds: 1418pF @ 10V Rds On (Max) @ Id, Vgs: 5.4mOhm @ 5.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250A Supplier Device Package: U-DFN2030-6 (Type B) Part Status: Active |
на замовлення 151337 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
DMN2008LFU-7 | Виробник : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V-24V |
на замовлення 6510 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
 |
DMN2008LFU-7 | Виробник : Diodes Inc |
Trans MOSFET N-CH 20V 14.5A 6-Pin UDFN EP T/R |
товар відсутній |
|||||||||||||||||
| DMN2008LFU-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 11.5A; Idm: 75A; 1.7W Kind of package: reel; tape Drain current: 11.5A On-state resistance: 9.6mΩ Type of transistor: N-MOSFET Power dissipation: 1.7W Polarisation: unipolar Gate charge: 42.3nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 75A Mounting: SMD Case: U-DFN2030-6 Drain-source voltage: 20V кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||||||||
| DMN2008LFU-7 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 11.5A; Idm: 75A; 1.7W Kind of package: reel; tape Drain current: 11.5A On-state resistance: 9.6mΩ Type of transistor: N-MOSFET Power dissipation: 1.7W Polarisation: unipolar Gate charge: 42.3nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 75A Mounting: SMD Case: U-DFN2030-6 Drain-source voltage: 20V |
товар відсутній |