DMN15H310SK3-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: MOSFET N-CH 150V 8.3A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 1.5A, 10V
Power Dissipation (Max): 32W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 150V 8.3A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 1.5A, 10V
Power Dissipation (Max): 32W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 210000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2500+ | 15.75 грн |
5000+ | 14.36 грн |
12500+ | 13.57 грн |
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Технічний опис DMN15H310SK3-13 Diodes Incorporated
Description: MOSFET N-CH 150V 8.3A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 155°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.3A (Tc), Rds On (Max) @ Id, Vgs: 310mOhm @ 1.5A, 10V, Power Dissipation (Max): 32W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252-3, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції DMN15H310SK3-13 за ціною від 15.03 грн до 45.23 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||
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DMN15H310SK3-13 | Виробник : Diodes Zetex | Trans MOSFET N-CH 150V 8.3A 3-Pin(2+Tab) DPAK T/R |
на замовлення 120000 шт: термін постачання 21-31 дні (днів) |
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DMN15H310SK3-13 | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 150V 8.3A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.3A (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 1.5A, 10V Power Dissipation (Max): 32W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 210198 шт: термін постачання 21-31 дні (днів) |
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DMN15H310SK3-13 | Виробник : Diodes Incorporated | MOSFETs 150V N-Ch Enh FET 310mOhm 10V 8.3A |
на замовлення 2120 шт: термін постачання 21-30 дні (днів) |
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DMN15H310SK3-13 | Виробник : Diodes Inc | Trans MOSFET N-CH 150V 8.3A 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
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DMN15H310SK3-13 | Виробник : Diodes Zetex | Trans MOSFET N-CH 150V 8.3A 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
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DMN15H310SK3-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 5.2A; Idm: 10A; 12W; TO252 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 8.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 10A Drain-source voltage: 150V Drain current: 5.2A On-state resistance: 0.35Ω Type of transistor: N-MOSFET Case: TO252 Power dissipation: 12W кількість в упаковці: 2500 шт |
товар відсутній |
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DMN15H310SK3-13 | Виробник : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 5.2A; Idm: 10A; 12W; TO252 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 8.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 10A Drain-source voltage: 150V Drain current: 5.2A On-state resistance: 0.35Ω Type of transistor: N-MOSFET Case: TO252 Power dissipation: 12W |
товар відсутній |