Технічний опис DMG4N65CTI Diodes Inc
Description: MOSFET N-CH 650V 4A ITO220AB, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V, Power Dissipation (Max): 8.35W (Ta), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: ITO-220AB, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V.
Інші пропозиції DMG4N65CTI
Фото | Назва | Виробник | Інформація |
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DMG4N65CTI | Виробник : Diodes Incorporated |
Description: MOSFET N-CH 650V 4A ITO220AB Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V Power Dissipation (Max): 8.35W (Ta) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: ITO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V |
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DMG4N65CTI | Виробник : Diodes Incorporated | MOSFET N-CH MOSFET 650V 4A |
товар відсутній |