Технічний опис DMC3060LVT-13 Diodes Inc
Description: MOSFET N/P-CH 30V 3.6A TSOT23-6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 830mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), 2.8A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 324pF @ 15V, Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V, Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.1V @ 250µA, Supplier Device Package: TSOT-23-6.
Інші пропозиції DMC3060LVT-13
Фото | Назва | Виробник | Інформація |
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DMC3060LVT-13 | Виробник : Diodes Incorporated |
Description: MOSFET N/P-CH 30V 3.6A TSOT23-6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 830mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta), 2.8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 324pF @ 15V Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.3nC @ 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA, 2.1V @ 250µA Supplier Device Package: TSOT-23-6 |
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DMC3060LVT-13 | Виробник : Diodes Incorporated | MOSFET MOSFET BVDSS: 25V~30V TSOT26 T&R 10K |
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