DGD2103MS8-13 Diodes Incorporated
Виробник: Diodes Incorporated
Description: IC GATE DRVR HALF-BRIDGE 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 142500 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2500+ | 35.9 грн |
5000+ | 32.46 грн |
7500+ | 31.39 грн |
12500+ | 28.35 грн |
17500+ | 27.69 грн |
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Технічний опис DGD2103MS8-13 Diodes Incorporated
Description: DIODES INC. - DGD2103MS8-13 - MOSFET-Treiber, Halbbrücke, 10V bis 20V Versorgung, 0.6Aout, 35ns Verzögerung, SOIC-8, tariffCode: 85423990, Sinkstrom: 600mA, Treiberkonfiguration: Halbbrücke, rohsCompliant: YES, Leistungsschalter: IGBT, MOSFET, IC-Montage: Oberflächenmontage, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, IC-Gehäuse / Bauform: SOIC, Eingang: Invertierend, nicht invertierend, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Anzahl der Kanäle: 2Kanäle, Betriebstemperatur, min.: -40°C, Quellstrom: 290mA, Versorgungsspannung, min.: 10V, euEccn: NLR, Gate-Treiber: -, Anzahl der Pins: 8Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Versorgungsspannung, max.: 20V, Eingabeverzögerung: 70ns, Ausgabeverzögerung: 35ns, Betriebstemperatur, max.: 125°C, SVHC: No SVHC (15-Jan-2018).
Інші пропозиції DGD2103MS8-13 за ціною від 29.67 грн до 124.5 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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DGD2103MS8-13 | Виробник : DIODES INC. |
Description: DIODES INC. - DGD2103MS8-13 - MOSFET-Treiber, Halbbrücke, 10V bis 20V Versorgung, 0.6Aout, 35ns Verzögerung, SOIC-8 tariffCode: 85423990 Sinkstrom: 600mA Treiberkonfiguration: Halbbrücke rohsCompliant: YES Leistungsschalter: IGBT, MOSFET IC-Montage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - IC-Gehäuse / Bauform: SOIC Eingang: Invertierend, nicht invertierend MSL: MSL 1 - unbegrenzt usEccn: EAR99 Anzahl der Kanäle: 2Kanäle Betriebstemperatur, min.: -40°C Quellstrom: 290mA Versorgungsspannung, min.: 10V euEccn: NLR Gate-Treiber: - Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Versorgungsspannung, max.: 20V Eingabeverzögerung: 70ns Ausgabeverzögerung: 35ns Betriebstemperatur, max.: 125°C SVHC: No SVHC (15-Jan-2018) |
на замовлення 448 шт: термін постачання 21-31 дні (днів) |
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DGD2103MS8-13 | Виробник : Diodes Incorporated | Gate Drivers HV Gate Driver |
на замовлення 2841 шт: термін постачання 21-30 дні (днів) |
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DGD2103MS8-13 | Виробник : Diodes Incorporated |
Description: IC GATE DRVR HALF-BRIDGE 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting, Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SO Rise / Fall Time (Typ): 70ns, 35ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 290mA, 600mA Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 145356 шт: термін постачання 21-31 дні (днів) |
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DGD2103MS8-13 | Виробник : Diodes Inc | Driver 2-OUT High and Low Side Half Brdg Inv/Non-Inv 8-Pin SO T/R |
товар відсутній |
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DGD2103MS8-13 | Виробник : DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver Operating temperature: -40...125°C Output current: -600...290mA Type of integrated circuit: driver Number of channels: 2 Kind of integrated circuit: gate driver Topology: IGBT half-bridge; MOSFET half-bridge Mounting: SMD Case: SO8 Supply voltage: 10...20V DC кількість в упаковці: 2500 шт |
товар відсутній |
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DGD2103MS8-13 | Виробник : DIODES INCORPORATED |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; gate driver Operating temperature: -40...125°C Output current: -600...290mA Type of integrated circuit: driver Number of channels: 2 Kind of integrated circuit: gate driver Topology: IGBT half-bridge; MOSFET half-bridge Mounting: SMD Case: SO8 Supply voltage: 10...20V DC |
товар відсутній |