DBL208GH Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor CorporationDescription: BRIDGE RECT 1PHASE 1.2KV 2A DBL
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBL
Grade: Automotive
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 44.86 грн |
| 50+ | 34.25 грн |
| 100+ | 25.43 грн |
| 500+ | 18.64 грн |
| 1000+ | 15.15 грн |
| 2000+ | 13.54 грн |
| 5000+ | 12.64 грн |
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Технічний опис DBL208GH Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1.2KV 2A DBL, Packaging: Tube, Package / Case: 4-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Diode Type: Single Phase, Operating Temperature: -55°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: DBL, Grade: Automotive, Voltage - Peak Reverse (Max): 1.2 kV, Current - Average Rectified (Io): 2 A, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A, Current - Reverse Leakage @ Vr: 2 µA @ 1200 V, Qualification: AEC-Q101.