BSM75GD60DLCBOSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: IGBT MODULE 600V 95A 330W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 330 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Description: IGBT MODULE 600V 95A 330W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 330 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
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Технічний опис BSM75GD60DLCBOSA1 Infineon Technologies
Description: IGBT MODULE 600V 95A 330W, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge, Operating Temperature: -40°C ~ 125°C, Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 75A, NTC Thermistor: No, Supplier Device Package: Module, Part Status: Obsolete, Current - Collector (Ic) (Max): 95 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 330 W, Current - Collector Cutoff (Max): 500 µA, Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V.