BCR169SH6327XTSA1 Infineon Technologies
Виробник: Infineon TechnologiesTrans Digital BJT PNP 50V 100mA 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R
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Технічний опис BCR169SH6327XTSA1 Infineon Technologies
Description: TRANS 2PNP PREBIAS 0.25W SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-VSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual), Power - Max: 250mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V, Frequency - Transition: 200MHz, Resistor - Base (R1): 4.7kOhms, Supplier Device Package: PG-SOT363-PO, Part Status: Discontinued at Digi-Key.
Інші пропозиції BCR169SH6327XTSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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BCR169SH6327XTSA1 | Виробник : Infineon Technologies |
Trans Digital BJT PNP 50V 100mA 250mW Automotive 6-Pin SOT-363 T/R |
товар відсутній |
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 |
BCR169SH6327XTSA1 | Виробник : Infineon Technologies |
Description: TRANS 2PNP PREBIAS 0.25W SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Frequency - Transition: 200MHz Resistor - Base (R1): 4.7kOhms Supplier Device Package: PG-SOT363-PO Part Status: Discontinued at Digi-Key |
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