BAW78DE6327HTSA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: DIODE GEN PURP 400V 1A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Capacitance @ Vr, F: 10pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: PG-SOT89
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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Технічний опис BAW78DE6327HTSA1 Infineon Technologies
Description: DIODE GEN PURP 400V 1A SOT89, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 1 µs, Technology: Standard, Capacitance @ Vr, F: 10pF @ 0V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: PG-SOT89, Operating Temperature - Junction: 150°C (Max), Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A, Current - Reverse Leakage @ Vr: 1 µA @ 400 V.