BAS21E6359HTMA1

BAS21E6359HTMA1 Infineon Technologies


bas21series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141bed353f040f Виробник: Infineon Technologies
Description: DIODE GEN PURP 200V 250MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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Технічний опис BAS21E6359HTMA1 Infineon Technologies

Description: DIODE GEN PURP 200V 250MA SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Capacitance @ Vr, F: 5pF @ 0V, 1MHz, Current - Average Rectified (Io): 250mA, Supplier Device Package: PG-SOT23, Operating Temperature - Junction: 150°C (Max), Part Status: Last Time Buy, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA, Current - Reverse Leakage @ Vr: 100 nA @ 200 V, Grade: Automotive, Qualification: AEC-Q101.