AS7C316096C-10BINTR ALLIANCE MEMORY
Виробник: ALLIANCE MEMORYCategory: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.7÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 16Mb SRAM
Memory organisation: 2Mx8bit
Access time: 10ns
Case: TFBGA48
Mounting: SMD
Integrated circuit features: fast
Operating voltage: 2.7...3.6V
кількість в упаковці: 1000 шт
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Технічний опис AS7C316096C-10BINTR ALLIANCE MEMORY
Description: IC SRAM 16MBIT PARALLEL 48TFBGA, Packaging: Tape & Reel (TR), Package / Case: 48-LFBGA, Mounting Type: Surface Mount, Memory Size: 16Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 48-TFBGA (6x8), Write Cycle Time - Word, Page: 10ns, Memory Interface: Parallel, Access Time: 10 ns, Memory Organization: 2M x 8, DigiKey Programmable: Not Verified.
Інші пропозиції AS7C316096C-10BINTR
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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AS7C316096C-10BINTR | Виробник : Alliance Memory, Inc. |
Description: IC SRAM 16MBIT PARALLEL 48TFBGA Packaging: Tape & Reel (TR) Package / Case: 48-LFBGA Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-TFBGA (6x8) Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 2M x 8 DigiKey Programmable: Not Verified |
товар відсутній |
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AS7C316096C-10BINTR | Виробник : Alliance Memory |
SRAM SRAM, 16Mb, 2M x 8, 3.3V, 48ball TFBGA, 10ns, Industrial Temp - Tape & Reel |
товар відсутній |
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| AS7C316096C-10BINTR | Виробник : ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 2.7÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 16Mb SRAM Memory organisation: 2Mx8bit Access time: 10ns Case: TFBGA48 Mounting: SMD Integrated circuit features: fast Operating voltage: 2.7...3.6V |
товар відсутній |