AS7C31026B-10JINTR ALLIANCE MEMORY
Виробник: ALLIANCE MEMORYCategory: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 16kx8bit; 3.3V; 10ns; SOJ44; 400mils
Type of integrated circuit: SRAM memory
Kind of memory: asynchronous; SRAM
Memory: 1Mb SRAM
Memory organisation: 16kx8bit
Access time: 10ns
Case: SOJ44
Mounting: SMD
Integrated circuit features: fast
IC width: 400mils
Operating voltage: 3.3V
кількість в упаковці: 1000 шт
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Технічний опис AS7C31026B-10JINTR ALLIANCE MEMORY
Description: IC SRAM 1MBIT PARALLEL 44SOJ, Packaging: Tape & Reel (TR), Package / Case: 44-BSOJ (0.400", 10.16mm Width), Mounting Type: Surface Mount, Memory Size: 1Mbit, Memory Type: Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 3V ~ 3.6V, Technology: SRAM - Asynchronous, Memory Format: SRAM, Supplier Device Package: 44-SOJ, Write Cycle Time - Word, Page: 10ns, Memory Interface: Parallel, Access Time: 10 ns, Memory Organization: 64K x 16, DigiKey Programmable: Not Verified.
Інші пропозиції AS7C31026B-10JINTR
| Фото | Назва | Виробник | Інформація |
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AS7C31026B-10JINTR | Виробник : Alliance Memory, Inc. |
Description: IC SRAM 1MBIT PARALLEL 44SOJ Packaging: Tape & Reel (TR) Package / Case: 44-BSOJ (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-SOJ Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 64K x 16 DigiKey Programmable: Not Verified |
товар відсутній |
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| AS7C31026B-10JINTR | Виробник : Alliance Memory |
SRAM SRAM, 1Mb, 64K x 16, 3.3V, 44pin 400 mil SOJ, 10ns, Industrial Temp, B Die, T&R |
товар відсутній |
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| AS7C31026B-10JINTR | Виробник : ALLIANCE MEMORY |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 1MbSRAM; 16kx8bit; 3.3V; 10ns; SOJ44; 400mils Type of integrated circuit: SRAM memory Kind of memory: asynchronous; SRAM Memory: 1Mb SRAM Memory organisation: 16kx8bit Access time: 10ns Case: SOJ44 Mounting: SMD Integrated circuit features: fast IC width: 400mils Operating voltage: 3.3V |
товар відсутній |