APTC60HM45T1G MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 38A; SP1; Press-in PCB; 250W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 38A
Case: SP1
Topology: H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 45mΩ
Pulsed drain current: 130A
Power dissipation: 250W
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 38A; SP1; Press-in PCB; 250W
Type of module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 38A
Case: SP1
Topology: H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 45mΩ
Pulsed drain current: 130A
Power dissipation: 250W
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
кількість в упаковці: 1 шт
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Технічний опис APTC60HM45T1G MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 600V; 38A; SP1; Press-in PCB; 250W, Type of module: MOSFET transistor, Semiconductor structure: transistor/transistor, Drain-source voltage: 600V, Drain current: 38A, Case: SP1, Topology: H-bridge; NTC thermistor, Electrical mounting: Press-in PCB, On-state resistance: 45mΩ, Pulsed drain current: 130A, Power dissipation: 250W, Technology: CoolMOS™; SJ-MOSFET, Gate-source voltage: ±20V, Mechanical mounting: screw, кількість в упаковці: 1 шт.
Інші пропозиції APTC60HM45T1G
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APTC60HM45T1G | Виробник : Microchip Technology | Description: MOSFET 4N-CH 600V 49A SP1 |
товар відсутній |
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APTC60HM45T1G | Виробник : Microchip / Microsemi | Discrete Semiconductor Modules DOR CC8019 |
товар відсутній |
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APTC60HM45T1G | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 38A; SP1; Press-in PCB; 250W Type of module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 600V Drain current: 38A Case: SP1 Topology: H-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 45mΩ Pulsed drain current: 130A Power dissipation: 250W Technology: CoolMOS™; SJ-MOSFET Gate-source voltage: ±20V Mechanical mounting: screw |
товар відсутній |