Технічний опис APT8011JFLL Microchip Technology
Category: Transistor modules MOSFET, Description: Module; single transistor; 800V; 51A; ISOTOP; screw; Idm: 204A; 694W, Mechanical mounting: screw, Electrical mounting: screw, Type of module: MOSFET transistor, Technology: POWER MOS 7®, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 204A, Case: ISOTOP, Semiconductor structure: single transistor, Drain-source voltage: 800V, Drain current: 51A, On-state resistance: 0.125Ω, Power dissipation: 694W, Polarisation: unipolar, кількість в упаковці: 1 шт.
Інші пропозиції APT8011JFLL
Фото | Назва | Виробник | Інформація |
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APT8011JFLL | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 51A; ISOTOP; screw; Idm: 204A; 694W Mechanical mounting: screw Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 204A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 800V Drain current: 51A On-state resistance: 0.125Ω Power dissipation: 694W Polarisation: unipolar кількість в упаковці: 1 шт |
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APT8011JFLL | Виробник : Microchip Technology |
Description: MOSFET N-CH 800V 51A ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 25.5A, 10V Vgs(th) (Max) @ Id: 5V @ 5mA Supplier Device Package: ISOTOP® Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9480 pF @ 25 V |
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APT8011JFLL | Виробник : Microchip / Microsemi | Discrete Semiconductor Modules FG, FREDFET, 800V, 0.11_OHM, SOT-227 |
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APT8011JFLL | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 800V; 51A; ISOTOP; screw; Idm: 204A; 694W Mechanical mounting: screw Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 204A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 800V Drain current: 51A On-state resistance: 0.125Ω Power dissipation: 694W Polarisation: unipolar |
товар відсутній |