APT1204R7BFLLG Microchip Technology
Виробник: Microchip Technology
Description: MOSFET N-CH 1200V 3.5A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 1.75A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 25 V
Description: MOSFET N-CH 1200V 3.5A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 1.75A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 25 V
на замовлення 31 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 785.91 грн |
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Технічний опис APT1204R7BFLLG Microchip Technology
Description: MOSFET N-CH 1200V 3.5A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc), Rds On (Max) @ Id, Vgs: 4.7Ohm @ 1.75A, 10V, Power Dissipation (Max): 135W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: TO-247 [B], Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 25 V.
Інші пропозиції APT1204R7BFLLG
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APT1204R7BFLLG | Виробник : Microchip Technology | Trans MOSFET N-CH 1.2KV 3.5A 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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APT1204R7BFLLG | Виробник : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3.5A; Idm: 14A; 135W; TO247-3 Case: TO247-3 Mounting: THT Technology: POWER MOS 7® Drain-source voltage: 1.2kV Drain current: 3.5A On-state resistance: 4.7Ω Type of transistor: N-MOSFET Power dissipation: 135W Polarisation: unipolar Gate charge: 31nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 14A кількість в упаковці: 1 шт |
товар відсутній |
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APT1204R7BFLLG | Виробник : MICROSEMI |
TO247-3/3.5 A, 1200 V, 4.7 ohm, N-CHANNEL, Si, POWER, MOSFET APT1204R7 кількість в упаковці: 1 шт |
товар відсутній |
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APT1204R7BFLLG | Виробник : Microchip Technology | MOSFET FREDFET MOS7 1200 V 4.7 Ohm TO-247 |
товар відсутній |
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APT1204R7BFLLG | Виробник : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3.5A; Idm: 14A; 135W; TO247-3 Case: TO247-3 Mounting: THT Technology: POWER MOS 7® Drain-source voltage: 1.2kV Drain current: 3.5A On-state resistance: 4.7Ω Type of transistor: N-MOSFET Power dissipation: 135W Polarisation: unipolar Gate charge: 31nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 14A |
товар відсутній |