APT1201R5BVFRG MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; Idm: 40A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 285nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; Idm: 40A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 285nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
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Технічний опис APT1201R5BVFRG MICROCHIP (MICROSEMI)
Category: THT N channel transistors, Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; Idm: 40A, Type of transistor: N-MOSFET, Technology: POWER MOS 5®, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 10A, Pulsed drain current: 40A, Power dissipation: 370W, Case: TO247-3, Gate-source voltage: ±30V, On-state resistance: 1.5Ω, Mounting: THT, Gate charge: 285nC, Kind of channel: enhanced, кількість в упаковці: 1 шт.
Інші пропозиції APT1201R5BVFRG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APT1201R5BVFRG | Виробник : Microsemi | MOSFET Power FREDFET - MOS5 |
товар відсутній |
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APT1201R5BVFRG | Виробник : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1.2kV; 10A; Idm: 40A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 10A Pulsed drain current: 40A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Gate charge: 285nC Kind of channel: enhanced |
товар відсутній |