Технічний опис APL602B2G Microchip Technology
Description: MOSFET N-CH 600V 49A T-MAX, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 49A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 24.5A, 12V, Power Dissipation (Max): 730W (Tc), Vgs(th) (Max) @ Id: 4V @ 2.5mA, Supplier Device Package: T-MAX™ [B2], Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V.
Інші пропозиції APL602B2G
| Фото | Назва | Виробник | Інформація |
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APL602B2G | Виробник : Microchip Technology |
 Trans MOSFET N-CH 600V 49A 3-Pin(3+Tab) T-MAX Tube |
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| APL602B2G | Виробник : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Linear™; unipolar; 600V; 49A; Idm: 196A; 730W Type of transistor: N-MOSFET Technology: Linear™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 49A Pulsed drain current: 196A Power dissipation: 730W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Kind of channel: enhanced кількість в упаковці: 1 шт |
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APL602B2G | Виробник : Microchip Technology |
Description: MOSFET N-CH 600V 49A T-MAX Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 24.5A, 12V Power Dissipation (Max): 730W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: T-MAX™ [B2] Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V |
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| APL602B2G | Виробник : Microchip Technology |
MOSFET Modules MOSFET Linear 600 V 49 A TO-247 MAX |
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| APL602B2G | Виробник : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Linear™; unipolar; 600V; 49A; Idm: 196A; 730W Type of transistor: N-MOSFET Technology: Linear™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 49A Pulsed drain current: 196A Power dissipation: 730W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Kind of channel: enhanced |
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