AONV070V65G1 Alpha & Omega Semiconductor Inc.
Виробник: Alpha & Omega Semiconductor Inc.Description: GAN
Packaging: Tube
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A
Rds On (Max) @ Id, Vgs: 90mOhm @ 6A, 6V
Power Dissipation (Max): 125W
Vgs(th) (Max) @ Id: 2.3V @ 5mA
Supplier Device Package: 8-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): 6V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 203 pF @ 400 V
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Технічний опис AONV070V65G1 Alpha & Omega Semiconductor Inc.
Description: GAN, Packaging: Tube, Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C, Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A, Rds On (Max) @ Id, Vgs: 90mOhm @ 6A, 6V, Power Dissipation (Max): 125W, Vgs(th) (Max) @ Id: 2.3V @ 5mA, Supplier Device Package: 8-DFN (8x8), Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): 6V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 203 pF @ 400 V.