AM7356N-CT Analog Power Inc.
Виробник: Analog Power Inc.Description: MOSFET N-CH 100V 20A DFN3x3
Packaging: Bulk
Package / Case: DFN3x3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN3x3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 50 V
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 76.66 грн |
| 10+ | 49.36 грн |
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Технічний опис AM7356N-CT Analog Power Inc.
Description: MOSFET N-CH 100V 20A DFN3x3, Packaging: Bulk, Package / Case: DFN3x3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 4.5V, Power Dissipation (Max): 22W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: DFN3x3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 50 V.